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| SEMiX 201GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 13s Trench IGBT Modules SEMiX 201GD066HDs Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Preliminary Data Features Typical Applications Remarks Inverse diode Thermal characteristics Temperature sensor Mechanical data GD 1 14-02-2006 GES (c) by SEMIKRON SEMiX 201GD066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-02-2006 GES (c) by SEMIKRON SEMiX 201GD066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward charact., incl. RCC'+EE' Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-02-2006 GES (c) by SEMIKRON SEMiX 201GD066HDs Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-02-2006 GES (c) by SEMIKRON |
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